A compact, wideband, and temperature robust 67-90-GHz SiGe power amplifier with 30% PAE
Keywords: 
BiCMOS.
E-band.
Millimeter-waves (mm-waves).
Power amplifier.
RF integrated circuits.
Issue Date: 
May-2019
Publisher: 
IEEE
Project: 
RTC-2016-5274-4
ISSN: 
1531-1309
Citation: 
del Rio, D., Gurutzeaga, I., Beriain, A., Solar, H., & Berenguer, R. (2019). A compact, wideband, and temperature robust 67–90-GHz SiGe power amplifier with 30% PAE. IEEE Microwave and Wireless Components Letters, 29(5), 351-353.
Abstract
This letter presents the design of a compact, wideband, and high-efficiency E-band power amplifier, integrated in a 0.13-mu m BiCMOS process and occupying 0.3 mm(2). It consists of a single-stage balanced amplifier, with HBT transistors in cascode configuration. The power amplifier (PA) is biased in class AB, with a dc consumption of 156 mW. A compact bias circuit is employed to achieve temperature robustness, while the layout is optimized for wideband and highly efficient operation. Measurements show a peak power gain of 15.3 dB at 83 GHz, with a 29.3% fractional bandwidth and less than 1-dB degradation over a 25 degrees C-85 degrees C temperature range. The peak output power at saturation and 1-dB compression is 18.6 and 13.6 dBm, respectively, and the maximum power-added efficiency (PAE) is 30.7%.

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