A compact and high-linearity 140-160 GHz active phase shifter in 55 nm BiCMOS

Abstract

This letter presents the design of a 140-160 GHz vector-modulator-type phase shifter, integrated in a 55-nm BiCMOS technology. The circuit is optimized to minimize the occupied area and maximize the linearity, facilitating its integration in D-band phased arrays. Test results show an average insertion loss of 4.5 dB, an OP 1 dB of -3.7 dBm, and rms gain/phase errors lower than 1.4 dB and 7.5 degrees. The circuit core occupies 0.05 mm(2), consuming less than 66 mW of dc power.