A compact and high-linearity 140-160 GHz active phase shifter in 55 nm BiCMOS
Keywords: 
Transistors.
Gain.
Linearity.
Couplers.
Insertion loss.
Phased arrays.
BiCMOS integrated circuits.
Millimeter-wave (mmW)
Issue Date: 
Feb-2021
Publisher: 
IEEE
ISSN: 
1531-1309
Citation: 
Del Rio, D., Gurutzeaga, I., Berenguer, R., Huhtinen, I., & Sevillano, J. F. (2020). A compact and high-linearity 140–160 GHz active phase shifter in 55 nm BiCMOS. IEEE Microwave and Wireless Components Letters, 31(2), 157-160.
Abstract
This letter presents the design of a 140-160 GHz vector-modulator-type phase shifter, integrated in a 55-nm BiCMOS technology. The circuit is optimized to minimize the occupied area and maximize the linearity, facilitating its integration in D-band phased arrays. Test results show an average insertion loss of 4.5 dB, an OP 1 dB of -3.7 dBm, and rms gain/phase errors lower than 1.4 dB and 7.5 degrees. The circuit core occupies 0.05 mm(2), consuming less than 66 mW of dc power.

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